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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Single-ended requirements for differential signals  
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, , ,L, or U) has also to comply  
with certain requirements for single-ended signals.  
CK and  have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH (ac) / VIL (ac))  
for ADD/CMD signals) in every half-cycle. DQS, DQSL, DQSU, , L have to reach VSEHmin / VSELmax (approxi-  
mately the ac-levels (VIH (ac) / VIL (ac)) for DQ signals) in every half-cycle proceeding and following a valid transition.  
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if VIH150  
(ac)/VIL150(ac) is used for ADD/CMD signals, then these ac-levels apply also for the single ended signals CK and   
Version 1.4  
05/2019  
95  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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