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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
 浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第146页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第147页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第148页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第149页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第150页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第152页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第153页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第154页  
NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Derating values DDR3- 1866/2133 tDS/tDH - AC/DC based AC135 Threshold  
DDR3  
Alternate AC135 Threshold -> VIH(ac)=VREF(dc)+135mV, VIL(ac)=VREF(dc)-135mV  
Alternate DC100 Threshold -> VIH(dc)=VREF(dc)+100mV, VIL(dc)=VREF(dc)-100mV  
DQS,  Differential Slew Rate  
8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns  
4.0 V/ns  
3.0 V/ns  
2.0 V/ns  
1.8 V/ns  
1.6 V/ns  
1.4 V/ns  
1.2 V/ns  
1.0 V/ns  
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH  
34 25 34 25 34 25  
-
-
-
-
-
-
-
-
-
-
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
29 21 29 21 29 21 29  
23 17 23 17 23 17 23  
21  
17  
10  
-
-
3.5  
3
23  
14  
17  
10  
-
-
-
-
-
-
14 10 14 10 14  
14  
10  
2.5  
DQ  
Slew  
rate  
-
-
0
0
0
0
0
0
0
0
0
0
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
-
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-23 -17 -23 -17 -23 -17 -23 -17 -15 -9  
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-
-
-
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-
1.5  
1
-
-
-
-
-
-
-
-
-
-
-
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-
-68 -50 -68 -50 -68 -50 -60 -42 -52 -34  
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-
-66 -54 -66 -54 -58 -46 -50 -38 -42 -30  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
-
-
-
-
-
-
-
-
-
-
-64 -60 -56 -52 -48 -44 -40 -36 -32 -26  
V/ns  
-
-
-
-
-
-
-
-
-53 -59 -45 -51 -37 -43 -29 -33 -21 -17  
-
-
-
-
-
-
-43 -61 -35 -53 -27 -43 -19 -27  
-
-
-
-
-39 -66 -31 -56 -23 -40  
-38 -76 -30 -60  
-
-
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.  
Derating values DDR3- 1600 tDS/tDH - AC/DC based AC135 Threshold  
DDR3  
Alternate AC135 Threshold -> VIH(ac)=VREF(dc)+135mV, VIL(ac)=VREF(dc)-135mV  
Alternate DC100 Threshold -> VIH(dc)=VREF(dc)+100mV, VIL(dc)=VREF(dc)-100mV  
DQS,  Differential Slew Rate  
4.0 V/ns  
3.0 V/ns  
2.0 V/ns  
1.8 V/ns  
1.6 V/ns  
1.4 V/ns  
1.2 V/ns  
1.0 V/ns  
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH  
2
68  
45  
50  
34  
68  
45  
50  
34  
68  
45  
50  
34  
-
-
-
-
-
-
-
-
-
-
-
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-
-
-
-
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-
1.5  
53  
42  
1
0
0
0
0
0
0
8
8
16  
16  
-
-
-
-
-
-
DQ  
Slew rate  
V/ns  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
-
-
-
-
-
-
-
-
-
-
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2
-
-4  
-
2
3
-
-4  
10  
11  
14  
-
4
-2  
-8  
-
18  
19  
22  
25  
-
12  
6
26  
27  
30  
33  
29  
-
20  
14  
8
-
-
-
-
-10  
35  
38  
41  
37  
30  
24  
18  
8
-
-
-
-
-
-
-
-
0
46  
49  
45  
38  
34  
24  
10  
-10  
-
-
-
-10  
-
-2  
-16  
-
-
-
-
-
-
-6  
-
-
-
-
-
-
-
-26  
NOTE1: Cell contents shaded in gray are defined as ‘not supported’.  
Version 1.4  
05/2019  
151  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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