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N16L163WC2CT1-55IL 参数 Datasheet PDF下载

N16L163WC2CT1-55IL图片预览
型号: N16L163WC2CT1-55IL
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mb的超低功耗异步SRAM CMOS 1024K 】 16位 [16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 16 bit]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 266 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N16L163WC2C
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1V
CC
to 0.9 V
CC
1V/ns
0.5 V
CC
CL = 50pF
-40 to +85
o
C
Advance Information
Timing
Item
Read Cycle Time
Address Access Time (Random Access)
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Note:
1. Full Device AC operation requires linear Vcc ramp from 0 to Vcc(min)
500us.
2. Full Device operation requires linear Vcc ramp from V
DR
to Vcc(min)
100 us or stable at Vcc(min)
100us.
3. Address valid prior to or coincident with CE1, LB, UB transition LOW and CE2 transition HIGH.
Symbol
t
RC
t
AA
t
CO
t
OE
t
LB
, t
UB
t
LZ
t
OLZ
t
LBZ
, t
UBZ
t
HZ
t
OHZ
t
LBHZ
, t
UBHZ
t
OH
t
WC
t
CW
t
AW
t
LBW
, t
UBW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
55
Min
55
55
55
25
55
10
5
10
20
20
20
10
55
40
40
40
40
0
0
20
25
0
10
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23383-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5