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N08T1630C2BZ-70 参数 Datasheet PDF下载

N08T1630C2BZ-70图片预览
型号: N08T1630C2BZ-70
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512Kx16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 254 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
AW
CE1
t
CW
CE2
t
BW
LB, UB
t
AS
WE
t
DW
High-Z
Data In
t
WHZ
Data Out
t
WP
N08T1630CxB
t
WR
t
DH
Data Valid
t
OW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
AW
CE1
(for CE2 Control, use
inverted signal)
LB, UB
t
WP
WE
t
DW
Data In
t
LZ
Data Out
t
WHZ
t
DH
t
CW
t
AS
t
BW
t
WR
Data Valid
High-Z
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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