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N08T1630C2BZ-70 参数 Datasheet PDF下载

N08T1630C2BZ-70图片预览
型号: N08T1630C2BZ-70
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512Kx16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 254 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
N08T1630CxB  
Timing  
-55  
-70  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tRC  
tAA  
Read Cycle Time  
Address Access Time  
55  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
55  
55  
30  
55  
70  
70  
35  
70  
tCO  
Chip Enable to Valid Output  
Output Enable to Valid Output  
Byte Select to Valid Output  
tOE  
tLB, tUB  
tLZ  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Byte Select to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Byte Select Disable to High-Z Output  
Output Hold from Address Change  
5
5
5
5
tOLZ  
tBLZ  
tHZ  
5
5
0
20  
20  
20  
0
25  
25  
25  
tOHZ  
tBHZ  
tOH  
0
0
0
0
10  
10  
tWC  
tCW  
tAW  
tBW  
tWP  
tAS  
Write Cycle Time  
Chip Enable to End of Write  
Address Valid to End of Write  
Byte Select to End of Write  
Write Pulse Width  
55  
45  
45  
45  
45  
0
70  
55  
55  
55  
55  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Setup Time  
tWR  
tWHZ  
tDW  
tDH  
Write Recovery Time  
0
0
Write to High-Z Output  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
25  
25  
40  
0
40  
0
tOW  
5
5
ns  
(DOC# 14-02-004 REV H ECN# 01-1102)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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