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N08M163WL1AD 参数 Datasheet PDF下载

N08M163WL1AD图片预览
型号: N08M163WL1AD
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步医疗CMOS SRAM 512Kx16位 [8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 8 页 / 235 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Functional Block Diagram
N08M163WL1A
Address
Inputs
A
0
- A
3
Word
Address
Decode
Logic
W
o
r
d
M
u
x
Input/
Output
Mux
and
Buffers
Address
Inputs
A
4
- A
18
Page
Address
Decode
Logic
32K Page
x 16 Word
x 16 bit
RAM Array
I/O
0
- I/O
7
I/O
8
- I/O
15
CE1#
CE2
WE#
OE#
UB#
LB#
Control
Logic
Functional Description
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
L
H
H
OE
X
X
X
2
L
H
I/O
0
- I/O
7
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
1
Standby
Write
Read
Active
POWER
Standby
Standby
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2