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N08L163WC1CT1 参数 Datasheet PDF下载

N08L163WC1CT1图片预览
型号: N08L163WC1CT1
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512K 】 16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 224 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N08L163WC1C  
Advance Information  
NanoAmp Solutions, Inc.  
Timing Test Conditions  
Item  
0.1VCC to 0.9 VCC  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
1V/ns  
0.5 VCC  
CL = 50pF  
-40 to +85 oC  
Operating Temperature  
Timing  
55  
Item  
Symbol  
Units  
Min  
Max  
tRC  
tAA  
Read Cycle Time  
Address Access Time (Random Access)  
Chip Enable to Valid Output  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
55  
55  
25  
55  
tCO  
tOE  
Output Enable to Valid Output  
Byte Select to Valid Output  
tLB, tUB  
tLZ  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Byte Select to Low-Z Output  
10  
5
tOLZ  
tLBZ, tUBZ  
tHZ  
10  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Byte Select Disable to High-Z Output  
Output Hold from Address Change  
20  
20  
20  
tOHZ  
tLBHZ, tUBHZ  
tOH  
10  
tWC  
tCW  
Write Cycle Time  
Chip Enable to End of Write  
Address Valid to End of Write  
Byte Select to End of Write  
Write Pulse Width  
55  
40  
40  
40  
40  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAW  
tLBW, tUBW  
tWP  
tAS  
Address Setup Time  
tWR  
Write Recovery Time  
0
tWHZ  
tDW  
Write to High-Z Output  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
20  
25  
0
tDH  
tOW  
10  
ns  
Note:  
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization.  
2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) 100us or stable at Vcc(min) 100us.  
Stock No. 23394-B 01/05  
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.