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N08L163WC1CT1 参数 Datasheet PDF下载

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型号: N08L163WC1CT1
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512K 】 16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 224 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N08L163WC1C
NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Advance Information
Address
Inputs
A4 - A18
Page
Address
Decode
Logic
32K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
Word Mux
I/O0 - I/O7
I/O8 - I/O15
CE
WE
OE
UB
LB
Control
Logic
Functional Description
CE
H
X
L
L
L
WE
X
X
L
H
H
OE
X
X
X
3
L
H
UB
X
H
L
1
L
1
L
1
LB
X
H
L
1
L
1
L
1
I/O
0
- I/O
151
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
2
Standby
2
Write
3
Read
Active
POWER
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O
0
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
0
- I/O
7
are affected as shown. When UB is in the select mode only I/O
8
- I/O
15
are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are inter-
nally isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
10
10
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23394-B 01/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2