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N08L083WC2C 参数 Datasheet PDF下载

N08L083WC2C图片预览
型号: N08L083WC2C
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 1024K 】 8位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 217 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N08L083WC2C
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1V
CC
to 0.9 V
CC
1V/ns
0.5 V
CC
CL = 30pF/50pF
-40 to +85
o
C
Advance Information
Timing
Item
Read Cycle Time
Address Access Time (Random Access)
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Note:
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200µs wait time after Vcc stablization.
2. Full device operation requires linear Vcc ramp from V
DR
to Vcc(min)
100us or stable at Vcc(min)
100µs.
Symbol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
55
Min
55
55
55
25
10
5
20
20
10
55
40
40
40
0
0
20
25
0
10
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23379-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4