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N08L083WC2C 参数 Datasheet PDF下载

N08L083WC2C图片预览
型号: N08L083WC2C
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 1024K 】 8位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 217 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N08L083WC2C  
Advance Information  
NanoAmp Solutions, Inc.  
Functional Block Diagram  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
A0 - A3  
Input/  
Page  
1024K  
Address  
Inputs  
Output  
Address  
Decode  
Logic  
I/O0 - I/O7  
Mux  
x 8 bit  
RAM Array  
A4 - A19  
and  
Buffers  
CE1  
CE2  
WE  
OE  
Control  
Logic  
Functional Description  
I/O0 - I/O7  
CE1  
CE2  
WE  
OE  
MODE  
POWER  
H
X
L
X
L
H
X
X
L
X
X
X1  
High Z  
High Z  
Data In  
Standby  
Standby  
Write3  
Standby  
Standby  
Active  
L
L
H
H
H
H
L
H
Data Out  
High Z  
Active  
Active  
Read  
Active  
1. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
10  
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
10  
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Stock No. 23379-A  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
2