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N04L1618C2AB 参数 Datasheet PDF下载

N04L1618C2AB图片预览
型号: N04L1618C2AB
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM CMOS 256Kx16位 [4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 248 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N04L1618C2A
0.1V
CC
to 0.9 V
CC
5ns
0.5 V
CC
30pF
-40 to +85
o
C
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
t
RC
t
AA
t
CO
t
OE
t
LB
, t
UB
t
LZ
t
OLZ
t
LBZ
, t
UBZ
t
HZ
t
OHZ
t
LBHZ
, t
UBHZ
t
OH
t
WC
t
CW
t
AW
t
LBW
, t
UBW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
40
0
10
10
5
10
10
10
10
5
85
50
50
50
50
0
0
25
40
0
10
30
30
30
1.65 - 2.2 V
Min.
85
85
85
30
85
10
5
10
10
10
10
5
70
40
40
40
40
0
0
20
25
25
25
Max.
1.8 - 2.2 V
Min.
70
70
70
25
70
Max.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(DOC# 14-02-016 REV G ECN# 01-1266)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.