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N02L1618C1AT2 参数 Datasheet PDF下载

N02L1618C1AT2图片预览
型号: N02L1618C1AT2
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步SRAM CMOS 128Kx16位 [2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 263 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N02L1618C1A
NanoAmp Solutions, Inc.
Functional Block Diagram
Word
Address
Decode
Logic
Word Mux
Input/
Output
Mux
and
Buffers
Advance Information
Address
Inputs
A
0
- A
3
Address
Inputs
A
4
- A
16
Page
Address
Decode
Logic
8K Page
x 16 word
x 16 bit
RAM Array
I/O
0
- I/O
7
I/O
8
- I/O
15
CE
WE
OE
UB
LB
Control
Logic
Functional Description
CE
H
L
L
L
L
WE
X
X
L
H
H
OE
X
X
X
3
L
H
UB
X
H
L
L
L
LB
X
H
L
L
L
I/O
0
- I/O
151
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
2
Standby
Write
Read
Active
POWER
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O
0
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
0
- I/O
7
are affected as shown. When UB is in the select mode only I/O
8
- I/O
15
are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3