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N01L083WC2AT-55I 参数 Datasheet PDF下载

N01L083WC2AT-55I图片预览
型号: N01L083WC2AT-55I
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 55ns, CMOS, PDSO32]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 10 页 / 77 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Functional Block Diagram
Word
Address
Decode
Logic
Word Mux
N01L083WC2A
Address
Inputs
A
0
- A
3
Address
Inputs
A
4
- A
16
Page
Address
Decode
Logic
8K Page
x 16 word
x 8 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O
0
- I/O
7
CE1
CE2
WE
OE
Control
Logic
Functional Description
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
L
H
H
OE
X
X
X
2
L
H
I/O
0
- I/O
7
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
1
Standby
1
Write
2
Read
Active
POWER
Standby
Standby
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23033-03 1/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2