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GRM2195C1H562JA01D 参数 Datasheet PDF下载

GRM2195C1H562JA01D图片预览
型号: GRM2195C1H562JA01D
PDF下载: 下载PDF文件 查看货源
内容描述: 片状独石陶瓷电容器 [Chip Monolithic Ceramic Capacitors]
分类和应用: 电容器陶瓷电容器
文件页数/大小: 221 页 / 4341 K
品牌: MURATA [ muRata ]
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• This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our  
C02E.pdf  
!Note  
sales representatives or product engineers before ordering.  
• This PDF catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.  
10.12.20  
GJM Series Specifications and Test Methods  
Continued from the preceding page.  
Specifications  
No.  
Item  
Test Method  
Temperature Compensating Type  
The measured and observed characteristics should satisfy the  
specifications in the following table.  
Appearance  
No marking defects  
Apply the rated voltage at 40T2D and 90 to 95% humidity for  
500T12 hours.  
Remove and let sit for 24T2 hours at room temperature, then  
measure. The charge/discharge current is less than 50mA.  
Capacitance  
Change  
Within T7.5% or T0.75pF  
(whichever is larger)  
Humidity  
Load  
17  
30pF and over: QU200  
30pF and below: QU100W  
10  
3
Q
C
C: Nominal Capacitance (pF)  
I.R.  
More than 500Mor 25· F (whichever is smaller)  
The measured and observed characteristics should satisfy the  
specifications in the following table.  
Appearance  
No marking defects  
Apply 200% of the rated voltage for 1000T12 hours at the  
maximum operating temperature T3D. Let sit for 24T2 hours  
(temperature compensating type) at room temperature, then  
measure.  
Capacitance  
Change  
Within T3% or T0.3pF  
(whichever is larger)  
High  
18 Temperature  
Load  
30pF and over:  
10pF and over, 30pF and below: QU275W  
10pF and below:  
QU350  
5
2
C
The charge/discharge current is less than 50mA.  
Q
QU200W10C  
C: Nominal Capacitance (pF)  
I.R.  
More than 1,000Mor 50· F (whichever is smaller)  
0.1pFVCV1pF: 350m· pF below  
1pFFCV5pF: 300mbelow  
5pFFCV10pF: 250mbelow  
The ESR should be measured at room temperature, and  
frequency 1T0.2GHz with the equivalent of BOONTON Model  
34A.  
19 ESR  
The ESR should be measured at room temperature, and  
frequency 500T50MHz with the equivalent of HP8753B.  
10pFFCV33pF: 400mbelow  
Table A  
(1)  
Capacitance Change from 25D Value (% )  
Temp. Coeff.  
Y55D  
Y30D  
Y10D  
Char. Code  
*
(ppm/D)  
1
Max.  
0.58  
0.87  
Min.  
Y0.24  
Y0.48  
Max.  
0.40  
0.60  
Min.  
Y0.17  
Y0.33  
Max.  
0.25  
0.38  
Min.  
Y0.11  
Y0.21  
0T30  
0T60  
5C  
6C  
*1: Nominal values denote the temperature coefficient within a range of 25 to 125D.  
(2)  
Capacitance Change from 20D Value (% )  
Y25D  
Nominal Values  
Y55D  
Y10D  
Char.  
*
(ppm/D)  
2
Max.  
0.82  
1.37  
2.56  
Min.  
Max.  
0.49  
0.82  
1.54  
Min.  
Max.  
0.33  
0.55  
1.02  
Min.  
0T60  
0T120  
0T250  
Y0.45  
Y0.90  
Y1.88  
Y0.27  
Y0.54  
Y1.13  
Y0.18  
Y0.36  
Y0.75  
2C  
3C  
4C  
*2: Nominal values denote the temperature coefficient within a range of 20 to 125D.  
99