Test Method
(Ref. Standard:JIS C 5101, IEC60384）
No
Item
Specification
13 Resistance to
Appearance No defects or abnormalities.
<GJM02 size only>
Soldering Heat
Test Method
Solder
:
Reflow soldering (hot plate)
Sn-3.0Ag-0.5Cu
: 270+/-5℃
Capacitance Within +/-2.5% or +/- 0.25pF
:
Change
Q
(Whichever is larger)
Solder Temp.
Reflow Time
Test Substrate
Exposure Time
Preheat
:
10+/-0.5s
Within the specified initial value.
Within the specified initial value.
:
Glass epoxy PCB
24+/-2h
:
I.R.
:
120℃ to 150℃ for 1 min
Voltage proof No defects.
<GJM03/GJM15 size>
Test Method
Solder
:
Solder bath method
Sn-3.0Ag-0.5Cu
270+/-5℃
:
:
Solder Temp.
Immersion time
Exposure Time
Preheat
: 10+/-0.5s
:
24+/-2h
:
120℃ to 150℃ for 1 min
14
15
16
Appearance No defects or abnormalities.
Capacitance Within +/-2.5% or +/- 0.25pF
Solder the capacitor on the test substrate shown in Fig.3.
Temperature
Sudden Change
Perform the five cycles according to the four heat treatments
shown in the following table.
Change
(Whichever is larger)
Step
Temp.(C)
Min.Operating Temp.+0/-3
Room Temp.
Time (min)
30+/-3
2 to 3
Q
Within the specified initial value.
Within the specified initial value.
1
2
3
4
I.R.
30+/-3
2 to 3
Max.Operating Temp.+3/-0
Room Temp
Voltage proof No defects.
Exposure Time
Solder the capacitor on the test substrate shown in Fig.3.
: 24+/-2h
Appearance No defects or abnormalities.
Capacitance Within +/-7.5% or +/-0.75pF
High
Temperature
High Humidity
(Steady)
Test Temperature
Test Humidity
Test Time
: 40+/-2℃
Change
(Whichever is larger)
: 90%RH to 95%RH
: 500+/-12h
Q
30pF and over : Q≧200
Applied Voltage
: DC Rated Voltage
30pF and below : Q≧100+10C/3
Charge/discharge current : 50mA max.
Exposure Time : 24+/-2h
C:Nominal Capacitance(pF)
I.R.
More than 500MΩ or 25Ω·F (Whichever is smaller)
Appearance No defects or abnormalities.
Capacitance Within +/-3% or +/-0.3pF
Solder the capacitor on the test substrate shown in Fig.3.
Durability
Test Temperature
Test Time
: Max. Operating Temp. +/-3℃
Change
(Whichever is larger)
: 1000+/-12h
Applied Voltage
:
200% of the rated voltage
Q
30pF and overꢀ : Q≧350
Charge/discharge current : 50mA max.
Exposure Time 24+/-2h
10pF and over , 30pF and below : Q≧275+5C/2
10pF and below : Q≧200+10C
:
C:Nominal Capacitance (pF)
I.R.
More than 1,000MΩ or 50Ω·F (Whichever is smaller)
0.2pF ≦ C ≦ 1pF : 700mΩ/C below
17 ESR
(GJM02)
Measurement Frequency :1.0+/-0.1GHz
1pF
2pF
5pF
<
<
<
C ≦ 2pF : 600mΩ below
C ≦ 5pF : 500mΩ below
C ≦ 10pF : 300mΩ below
Measurement Temperature : Room Temp.
Measurement Instrument : Equivalent to E4991A
10pF < C ≦ 22pF : 350mΩ below
C:Nominal Capacitance (pF)
0.1pF ≦ C ≦ 1pF : 350mΩ/C below
1pF < C ≦ 5pF : 300mΩ below
5pF < C ≦10pF : 250mΩ below
C:Nominal Capacitance (pF)
Measurement Frequency :1.0+/-0.2GHz
ESR
(GJM03/GJM15)
Measurement Temperature : Room Temp.
Measurement Instrument : Equivalent to BOONTON Model 34A
10pF < C ≦ 47pF : 400mΩ below
Measurement Frequency :500+/-50MHz
Measurement Temperature : Room Temp.
Measurement Instrument : Equivalent to HP8753B
JEMCGS-0004M
3
MURATA [ muRata ]
