Low Operating Voltage, High f
T
SiGe Transistors
Maximum Ratings (TA = 25°C)
MPSIG001 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Power Dissipation
Micro-X Pkg (MPSIG001-535)
300 mW
150°C
V
CBO
V
CE
V
EB
I
C
T
j
T
S
10 V
3V
1.5 V
75 mA
200°C
-65°C to +200°C
MPSIG001 Series
Electrical Specifications @ 25°C
MPSIG001 Series
MPSIG00100
Parameter of Test
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 2 V
I
C
= 20 mA
V
CE
= 2 V
I
C
= 5 mA
f = .9 GHz
f = 2 GHz
V
CE
= 2 V
I
C
= 5 mA
f = .9 GHz
f = 2 GHz
V
CE
= 2 V
I
C
= 5 mA
f = 2 GHz
V
CE
= 2 V
I
C
= 5 mA
f = .9 GHz
f = 2 GHz
V
CE
= 2 V
I
C
= 20 mA
f = .9 GHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
17 typ
11 typ
NF
dB
.9 typ
1.1 typ
GTU (max)
dB
13 typ
MAG
dB
19 typ
12 typ
P
1dB
dBm
15 typ
14 typ
18 typ
11 typ
12 typ
.9 typ
1.1 typ
16 min
10.0 min
Chip
18 typ
MPSIG001-535
Micro-X
18 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Output Power at 1 dB
Compression
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
