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MPSIG001 参数 Datasheet PDF下载

MPSIG001图片预览
型号: MPSIG001
PDF下载: 下载PDF文件 查看货源
内容描述: 低OperatingVoltage ,高fT的硅锗晶体管微波 [Low OperatingVoltage, High fT SiGe Microwave Transistors]
分类和应用: 晶体晶体管微波
文件页数/大小: 4 页 / 252 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
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M-Pulse Microwave
Low OperatingVoltage, High f
T
SiGe Microwave Transistors
Features
Designed for Battery Operation
f
T
to 14 GHz
Low Voltage Oscillator and Amplifier
Low Phase Noise and Noise Figure
Hermetic Packaging and Die Available
Can be Screened to JANTX, JANTXV Equivalent Levels
MPSIG001
Case Styles 535
Description
The MPSIG001 family of low voltage, high gain band-
width silicon SiGe transistors provides low noise figure
and high gain at low bias voltages. These transistors
are especially attractive for low operating voltage low
noise amplifiers or driver amplifiers at frequencies to 5
GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
14 GHz.
The MPSIG001 family was designed to have low noise
figure at operating voltages as low as 2 volts. These
transistors also exhibit low phase noise in VCOs
operating at 2.5 volts or less.
Because this transistor family was specifically designed
to operate from low bias voltage, it has superior phase
noise.
The MPSIG001 series transistors are available in
hermetic Micro-X packages and in chip form
(MPSIG00100). Other stripline and hermetic packages
are available. The chip and hermetic packages can be
screened to JANTX, JANTXV equivalent levels
.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440