Low Current 8 Volt, Low Noise High fT Silicon Transistor
Typical Performance Curves (MP4T682535)
POWER DERATING CURVES
300
M P 4 T 6 8 2 5 0 0 (C H I P ) O N I N F I N I T E H E A T S I N K
POWER DISSIPATION (mW)
MP4T6825 Series
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 8 V, 1 GHz vs COLLECTOR CURRENT
20
18
ASSOCIATED GAIN (dB)
250
16
14
12
10
8
6
4
2
0
1
10
200
150
100
50
0
0
M P4T682533, 39
( S O T -2 3 , 1 4 3 ) F R E E A I R
NOISE FIGURE (dB)
M P4T 682535
(M I C R O -X )
A SS O C I AT E D G A IN
N O IS E F I G U R E
1 00
20
40
60
80
100
120
140
160
180
200
C O L L E C T O R C U R R E N T (m A )
A M B I E N T T E M P E R A T U R E (C )
GAIN vs FREQUENCY at VCE=8 V and IC =
5 mA
COLL.-BASE CAPACITANCE (pF)
COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE
0 .3 5
0.3
0 .2 5
0.2
0 .1 5
0.1
0 .0 5
0
25
20
GT U (M A X )
GAIN (dB)
15
10
5
0
1
F R E Q U E N C Y (G H z)
10
|S
21 E
|
2
1
10
C O L L E C T O R -B AS E V O L T A G E (V o lts )
1 00
GAIN BANDWIDTH PRODUCT (fT ) vs
COLLECTOR CURRENT at VCE=8 V
10
9
GAIN BANDWIDTH (GHz)
8
GAIN (dB)
7
6
5
4
3
2
1
0
1
10
C O L L E C T O R C U R R E N T (m A)
10 0
GAIN vs COLLECTOR CURRENT at 1
GHz, VCE=8 V
22
20
18
16
14
12
10
8
6
1
10
C O L L E C T O R C U R R E N T (m A)
10 0
M AG
G T U (M AX )
|S
2 1 E
|
2
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
