Low Current 8 Volt, Low Noise High fT Silicon Transistor
Electrical Specifications at 25°C
Symbol
fT
|S
21E
|
2
Parameters
Gain Bandwidth
Product
Insertion Power
Gain
Noise Figure
Test
Condition
s
V
CE
= 8V
I
C
= 8 mA
V
CE
= 8V
I
C
= 8 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8V
I
C
= 2 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8V
I
C
= 8 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8V
I
C
= 8 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8V
I
C
= 15 mA
f = 1 GHz
f = 2 GHz
Junction/
Ambient
(Free Air)
Junction/
Case
Units
GHz
dB
15 typ.
8 typ.
dB
1.8 max.
2.1 typ.
dB
17 typ.
11 typ.
dB
18 typ.
13 typ.
dBm
15 typ.
13.5 typ.
70 max.
1
MP4T6825 Series
MP4T682535
Micro-X
8 typ.
MP4T682539
SOT-143
8 typ.
MP4T682500
Chip
8 typ.
MP4T682533
SOT-23
8 typ.
14 typ.
7 typ.
1.9 max.
2.2 typ.
16 typ.
10 typ.
17 typ.
12 typ.
14 typ.
12.5 typ.
650 typ.
200 typ.
15 typ.
8 min.
1.8 max.
2.1 typ.
17 typ.
11 typ.
18 typ.
13 typ.
14 typ.
12.5 typ.
500 typ.
200 typ.
14 typ.
7 typ.
1.9 max.
2.2 typ.
16 typ.
10 typ.
17 typ.
12 typ.
15 typ.
13.5 typ.
625 typ.
200 typ.
NF
GTU (max)
Unilateral Gain
MAG
Maximum
Available Gain
Power Out at 1dB
Compression
Thermal
Resistance
Thermal
Resistance
P
1dB
R
TH (J-A)
R
TH (J-C)
1.
°C
°C/W
Junction to infinite heat sink.
Electrical Specifications at 25°C
Parameters
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector-Base
Junction Capacitance
Conditions
V
CB
= 8 V
I
E
= 0
V
EB
= 1 V
I
C
= 0
V
CE
= 8 V
I
C
= 5 mA
V
CB
= 8 V
I
E
= 0
f = 1 MHz
Symbol
I
CBO
I
EBO
h
FE
C
OB
Min.
30
Typ.
110
0.25
Max.
100
1
250
0.40
Units
nA
µA
pF
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
