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MP4T636500 参数 Datasheet PDF下载

MP4T636500图片预览
型号: MP4T636500
PDF下载: 下载PDF文件 查看货源
内容描述: 低OperatingVoltage ,高fT的微波双极晶体管 [Low OperatingVoltage, High fT Bipolar Microwave Transistors]
分类和应用: 晶体晶体管微波
文件页数/大小: 8 页 / 106 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
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Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365
Typical Performance Curves
MP4T6365 Series
V2.00
POWER DERATING CURVES
500
450
TOTAL POWER
DISSIPATION (mW)
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMP (7C)
MP4T636533 in
SOT-23 Package
MP4T636535 in
Micro-X Package
MP4T636500 Chip on
Infinite Heat Sink
NOMINAL COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE (MP4T636535)
1.1
1
COLLECTOR-BASE
CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0.5
0.4
0
5
10
15
COLLECTOR-BASE VOLTAGE
(Volts)
NOMINAL GAIN vs FREQUENCY at
V
CE
= 3 Volts, I
C
= 10 mA (MP4T636535)
24
GAIN (dB)
20
GAIN (dB)
16
GTU (MAX)
12
8
|S
21E
|2
4
0
1
2
FREQUENCY (GHz)
5
10
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.0 GHz, V
CE
= 3 Volts (MP4T636535)
20
19
18
17
16
15
14
13
12
11
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
GTU (MAX)
MAG
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440