Low Operating Voltage, High f
T
Bipolar Microwave Transistors
Maximum Ratings (TA = 25°
C)
MP4T6365 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Power Dissipation
Package Type
Chip (MP4T636500)
SOT-23 (MP4T636533)
Micro-X Package (MP4T636535)
SOT-143 (MP4T636539)
Maximum Dissipation
@ 25°
C
400 mW
200 mW
300 mW
225 mW
Maximum Operating
Temperature
175°
C
125°
C
150°
C
125°
C
V
CBO
V
CE
V
EB
I
C
T
j
T
S
10 V
6V
1.5 V
65 mA
200°
C
-65° to +200°
C
C
-65° to +125°
C
C
MP4T6365 Series
V2.00
Electrical Specifications @ 25°
C
MP4T6365 Series
MP4T636500
Parameter of Test
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 3 V
I
C
= 20 mA
V
CE
= 3 V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 5 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 5 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 20 mA
f = 1 GHz
f = 2 GHz
V
CE
= 3 V
I
C
= 20 mA
f = 2 GHz
f = 4 GHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
14 typ
7.0 min
NF
dB
1.3 typ
1.6 typ
GTU (max)
dB
15 typ
10 typ
MAG
dB
16 typ
12 typ
P
1dB
dBm
16 typ
12 typ
17 typ
13 typ
16 typ
12 typ
16 typ
12 typ
16 typ
11 typ
16 typ
10 typ
16 typ
10 typ
15 typ
10 typ
14 typ
9 typ
14 typ
9 typ
1.3 typ
1.6 typ
1.4 typ
1.7 typ
1.4 typ
1.7 typ
13 typ
7.0 min
13 typ
7.0 min
13 typ
7.0 min
Chip
10 typ
MP4T636535
Micro-X
10 typ
MP4T636539
SOT-143
10 typ
MP4T636533
SOT-23
10 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Output Power at 1 dB
Compression
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
