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MRF8372 参数 Datasheet PDF下载

MRF8372图片预览
型号: MRF8372
PDF下载: 下载PDF文件 查看货源
内容描述: 射频低功率晶体管NPN硅 [RF LOW POWER TRANSISTOR NPN SILICON]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管开关光电二极管
文件页数/大小: 6 页 / 105 K
品牌: MOTOROLA [ MOTOROLA ]
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ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 5.0 mAdc, I = 0)  
V
16  
36  
4.0  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 5.0 mAdc, V = 0)  
V
(BR)CES  
(BR)EBO  
C
BE  
Emitter–Base Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
V
Vdc  
E
C
Collector Cutoff Current  
(V = 15 Vdc, V  
I
0.1  
mAdc  
CES  
= 0, T = 25°C)  
CE  
BE  
C
ON CHARACTERISTICS  
DC Current Gain  
(I = 50 mAdc, V  
C
h
30  
90  
200  
2.5  
FE  
= 10 Vdc)  
CE  
DYNAMIC CHARACTERISTICS  
Output Capacitance  
C
1.8  
pF  
ob  
(V  
CB  
= 15 Vdc, I = 0, f = 1.0 MHz)  
E
FUNCTIONAL TESTS  
Common–Emitter Amplifier Power Gain  
G
8.0  
55  
10  
60  
dB  
%
pe  
(V  
CC  
= 12.5 Vdc, P  
= 0.75 W, f = 870 MHz)  
out  
out  
Collector Efficiency  
(V = 12.5 Vdc, P  
η
= 0.75 W, f = 870 MHz)  
CC  
MRF8372R1, R2  
2
MOTOROLA RF DEVICE DATA  
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