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by MJE2360T/D
SEMICONDUCTOR TECHNICAL DATA
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
. . . useful for general–purpose, high voltage applications requiring high f .
T
•
•
•
Collector–Emitter Sustaining Voltage —
= 350 Vdc (Min) @ I = 2.5 mAdc
350 VOLTS
30 WATTS
V
CEO(sus)
DC Current Gain —
= 40 (Min) @ I = 100 mAdc — MJE2361T
C
h
FE
Current–Gain–Bandwidth Product —
= 10 MHz (Typ) @ I = 50 mAdc
C
f
T
C
MAXIMUM RATINGS
Rating
Symbol
Value
350
375
6.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Base Current
V
CEO
V
CB
V
EB
CASE 221A–06
TO–220AB
I
C
0.5
I
B
0.25
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
30
0.24
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
4.167
C/W
JC
40
35
30
25
20
15
10
5.0
0
0
20
40
60
80
100
120
140
160
T
, CASE TEMPERATURE (°C)
C
Figure 1. Power–Temperature Derating Curve
REV 1
MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
MOTOROLA [ MOTOROLA ]
