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V54C316162V-55 参数 Datasheet PDF下载

V54C316162V-55图片预览
型号: V54C316162V-55
PDF下载: 下载PDF文件 查看货源
内容描述: 200/183/166/143 MHz的3.3伏, 4K刷新超高性能1M ×16 SDRAM 2组X达512Kbit ×16 [200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 21 页 / 306 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V54C316162V  
Signal Pin Description  
Pin  
CLK  
CKE  
Name  
Input Function  
Clock Input  
Clock Enable  
System clock input. Active on the positive rising edge to sample all inptus  
Activates the CLK signal when high and deactivates the CLK when low.  
CKE low initiates the power down mode, suspend mode, or the self  
refresh mode  
CS  
Chip Select  
Disables or enables device operation by masking or enabling all inputs  
except CLK, CKE and DQMi  
RAS  
CAS  
Row Address Strobe  
Column Address Strobe  
Latches row addresses on the positive edge of CLK with RAS low.  
Enables row access & precharge  
Latches column addresses on the positive edge of CLK with CAS low.  
Enables column access  
WE  
Write Enable  
Address  
Enables write operation  
A0-A10  
During a bank activate command, A0-A10 defines the row address.  
During a read or write command, A0-A7 defines the column address. In  
addition to the column address A10 is used to invoke auto precharge BA  
define the bank to be precharged. A10 is low, auto precharge is disabled  
during a precharge cycle, If A10 is high, both bank will be precharged ,  
if A10 is low, the BA is used to decide which bank to precharge. If A10 is  
high, all banks will be precharged.  
BA  
Bank Select  
Selects which bank to activate. BA low select bank A and high selects  
bank B  
I/O1-I/O16  
UDQM, LDQM  
VDD/VSS  
VDDQ/VSSQ  
NC  
Data Input/Output  
Data inputs/output are multiplexed on the same pins  
Makes data output Hi-Z. Blocks data input when DQM is active  
Power Supply. +3.3V ± 0.3V/ground  
Data Input/Output Mask  
Power Supply/Ground  
Data Output Power/Ground  
No Connection  
Provides isolated power/ground to DQs for improved noise immunity  
V54C316162V Rev.2.9 September 2001  
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