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V54C316162V-5 参数 Datasheet PDF下载

V54C316162V-5图片预览
型号: V54C316162V-5
PDF下载: 下载PDF文件 查看货源
内容描述: 200/183/166/143 MHz的3.3伏, 4K刷新超高性能1M ×16 SDRAM 2组X达512Kbit ×16 [200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 21 页 / 306 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V54C316162V
4. These parameter are measured with continuous data stream during read access and all DQ toggling.
CILETIV LESOM
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
ICC6
Operating Currents
(T
A
= 0 to 70°C, V
CC
= 3.3V
±
0.3V)
(Recommended Operating Conditions unless otherwise noted)
Max.
Parameter & Test Condition
Operating Current
Active-precharge command cycling,
without Burst Operation
Precharge Standby Current
in Power Down Mode
CS =V
IH
, CKE≤ V
IL(max)
Precharge Standby Current
in Non-Power Down Mode
CS =V
IH
, CKE≥ V
IL(max)
Active Standby Current in
Power-down mode
Active Standby Current in
non Power-down mode
Burst Operating Current
Read/Write command cycling
Auto Refresh Current
Auto Refresh command cycling
Self Refresh Current
Self Refresh Mode, CKE=<0.2V
1 bank operation
t
RC
= t
RCMIN.
, t
CK
= t
CKMIN
CL = 3
t
CK
= min.
t
CK
= Infinity
t
CK
= min.
t
CK
= Infinity
CKE =<V
IL
(max), t
ck
= min
CKE =<V
IL
(max), t
ck
= infinity
CKE => V
IL
(max), t
ck
= min
CKE => V
IL
(max), t
ck
= infinity
CL = 3
t
CK
= min.
CL = 3
t
CK
= min.
-5
125
-55
120
-6
115
-7
105
Unit Note
mA
3
2
2
2
2
mA
3
2
15
2
15
2
15
2
15
mA
mA
3
5
5
5
5
mA
3
3
45
40
160
3
3
45
40
155
3
3
45
40
150
3
3
45
40
140
mA
mA
mA
mA
mA
3, 4
110
105
100
90
mA
3
1
1
1
1
mA
Notes:
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of t
CK
and
t
RC
. Input signals are changed one time during t
CK
except for ICC6 and for standby current when t
CK
= infinity.
V54C316162V Rev. 2.9 September 2001
9