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V54C3128804VAT 参数 Datasheet PDF下载

V54C3128804VAT图片预览
型号: V54C3128804VAT
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能133分之143 / 125MHz的3.3伏16M ×8的同步DRAM 4组X的4Mbit ×8 [HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8]
分类和应用: 动态存储器
文件页数/大小: 43 页 / 362 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC  
V54C3128804VAT  
Precharge Command  
Burst Termination  
There is also a separate precharge command  
available. When RAS and WE are low and CAS is  
high at a clock timing, it triggers the precharge  
operation. Three address bits, BA0, BA1 and A10  
are used to define banks as shown in the following  
list. The precharge command can be imposed one  
clock before the last data out for CAS latency = 2,  
two clocks before the last data out for CAS latency  
= 3. Writes require a time delay twr from the last  
data out to apply the precharge command.  
Once a burst read or write operation has been ini-  
tiated, there are several methods in which to termi-  
nate the burst operation prematurely. These  
methods include using another Read or Write Com-  
mand to interrupt an existing burst operation, use a  
Precharge Command to interrupt a burst cycle and  
close the active bank, or using the Burst Stop Com-  
mand to terminate the existing burst operation but  
leave the bank open for future Read or Write Com-  
mands to the same page of the active bank. When  
interrupting a burst with another Read or Write  
Command care must be taken to avoid I/O conten-  
tion. The Burst Stop Command, however, has the  
fewest restrictions making it the easiest method to  
use when terminating a burst operation before it has  
been completed. If a Burst Stop command is issued  
during a burst write operation, then any residual  
data from the burst write cycle will be ignored. Data  
that is presented on the I/O pins before the Burst  
Stop Command is registered will be written to the  
memory.  
Bank Selection by Address Bits:  
A10 BA0 BA1  
0
0
0
0
1
0
0
1
1
X
0
1
0
1
X
Bank 0  
Bank 1  
Bank 2  
Bank 3  
all Banks  
Recommended Operation and Characteristics for LV-TTL  
T = 0 to 70 °C; V = 0 V; V ,V  
= 3.3 V 0.3 V  
A
SS  
CC CCQ  
Limit Values  
Parameter  
Symbol  
min.  
max.  
Unit Notes  
Input high voltage  
Input low voltage  
V
2.0  
0.3  
2.4  
Vcc+0.3  
V
V
1, 2  
1, 2  
IH  
V
0.8  
IL  
Output high voltage (I  
= 4.0 mA)  
V
V
OUT  
OH  
Output low voltage (I  
= 4.0 mA)  
V
0.4  
5
V
OUT  
OL  
Input leakage current, any input  
I
5  
µA  
I(L)  
(0 V < V < 3.6 V, all other inputs = 0 V)  
IN  
Output leakage current  
I
5  
5
µA  
O(L)  
(DQ is disabled, 0 V < V  
< V  
)
OUT  
CC  
Note:  
1. All voltages are referenced to V  
.
SS  
2.  
V
may overshoot to V + 2.0 V for pulse width of < 4ns with 3.3V. V may undershoot to -2.0 V for pulse width < 4.0 ns with  
IH CC IL  
3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference.  
V54C3128804VAT Rev. 1.4 November 2000  
9
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