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V53C8258H35 参数 Datasheet PDF下载

V53C8258H35图片预览
型号: V53C8258H35
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能256K ×8 EDO页模式的CMOS动态RAM [HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 18 页 / 221 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V53C8258H  
MOSEL VITELIC  
AC Characteristics (Cont'd)  
JEDEC  
35  
40  
45  
50  
#
Symbol Symbol Parameter  
Min. Max. Min. Max. Min. Max. Min. Max. Unit  
Notes  
27 tWL1CL2  
28 tCL1WH1  
29 tWL1WH1 tWP  
30 tRL1WH1 tWCR  
tWCS  
Write Command Setup Time  
Write Command Hold Time  
Write Pulse Width  
0
5
0
5
0
6
0
7
ns  
ns  
ns  
ns  
12, 13  
tWCH  
5
5
6
7
Write Command Hold Time  
28  
30  
35  
40  
from RAS  
31 tWL1RH1  
tRWL  
Write Command to RAS  
12  
12  
13  
14  
ns  
Lead Time  
32 tDVWL2  
33 tWL1DX  
34 tWL1GL2  
35 tGH2DX  
tDS  
Data in Setup Time  
Data in Hold Time  
0
4
0
5
0
6
0
7
ns  
ns  
ns  
ns  
ns  
14  
14  
14  
14  
tDH  
tWOH  
tOED  
tRWC  
Write to OE Hold Time  
OE to Data Delay Time  
5
6
7
8
5
6
7
8
36 tRL2RL2  
(RMW)  
Read-Modify-Write  
Cycle Time  
105  
110  
115  
130  
37 tRL1RH1  
(RMW)  
tRRW  
Read-Modify-Write Cycle  
70  
75  
80  
87  
ns  
RAS Pulse Width  
38 tCL1WL2  
39 tRL1WL2  
tCWD  
tRWD  
CAS to WE Delay  
28  
54  
30  
58  
32  
62  
34  
68  
ns  
ns  
12  
12  
RAS to WE Delay in  
Read-Modify-Write Cycle  
40 tCL1CH1  
41 tAVWL2  
42 tCL2CL2  
tCRW  
tAWD  
tPC  
CAS Pulse Width (RMW)  
Col. Address to WE Delay  
46  
35  
14  
48  
38  
15  
50  
41  
17  
52  
42  
19  
ns  
ns  
ns  
12  
EDO Page Mode  
Read or Write Cycle Time  
43 tCH2CL2  
44 tAVRH1  
tCP  
CAS Precharge Time  
4
5
6
7
ns  
ns  
tCAR  
Column Address to RAS  
18  
20  
22  
24  
Setup Time  
45 tCH2QV  
46 tRL1DX  
47 tCL1RL2  
tCAP  
tDHR  
tCSR  
Access Time from  
Column Precharge  
20  
22  
24  
27  
ns  
ns  
ns  
7
Data in Hold Time  
28  
10  
30  
10  
35  
10  
40  
10  
Referenced to RAS  
CAS Setup Time  
CAS-before-RAS Refresh  
48 tRH2CL2  
49 tRL1CH1  
tRPC  
tCHR  
RAS to CAS Precharge Time  
0
8
0
8
0
0
ns  
ns  
CAS Hold Time  
10  
12  
CAS-before-RAS Refresh  
50 tCL2CL2  
(RMW)  
tPCM  
EDO Page Mode Read-  
Modify-Write Cycle Time  
58  
60  
65  
70  
ns  
V53C8258H Rev. 1.4 February 1997  
6