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V53C818H35 参数 Datasheet PDF下载

V53C818H35图片预览
型号: V53C818H35
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能512K ×16 EDO页模式的CMOS动态RAM [HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 18 页 / 234 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC  
V53C818H  
AC Characteristics (Cont’d)  
30  
35  
40  
45  
50  
#
Symbol Parameter  
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes  
29  
30  
t
t
Write Pulse Width  
5
5
5
6
7
ns  
ns  
WP  
Write Command Hold Time  
from RAS  
26  
28  
30  
35  
40  
WCR  
31  
t
Write Command to RAS Lead  
Time  
10  
11  
12  
13  
14  
ns  
RWL  
32  
33  
34  
35  
36  
37  
t
t
t
t
t
t
Data in Setup Time  
Data in Hold Time  
0
5
5
5
0
5
0
5
0
6
0
7
ns  
ns  
ns  
ns  
ns  
ns  
14  
14  
14  
14  
DS  
DH  
Write to OE Hold Time  
OE to Data Delay Time  
5
6
7
8
WOH  
OED  
RWC  
RRW  
5
6
7
8
Read-Modify-Write Cycle Time 100  
105  
70  
110  
75  
115  
80  
130  
87  
Read-Modify-Write Cycle RAS  
Pulse Width  
65  
38  
39  
t
t
CAS to WE Delay  
26  
50  
28  
54  
30  
58  
32  
62  
34  
68  
ns  
ns  
12  
12  
CWD  
RAS to WE Delay in Read-  
Modify-Write Cycle  
RWD  
40  
41  
42  
t
t
t
CAS Pulse Width (RMW)  
Col. Address to WE Delay  
44  
32  
46  
35  
14  
48  
38  
15  
50  
41  
17  
52  
42  
19  
ns  
ns  
ns  
CRW  
AWD  
PC  
12  
EDO Fast Page Mode Read or 12  
Write Cycle Time  
43  
44  
t
t
CAS Precharge Time  
3
4
5
6
7
ns  
ns  
CP  
Column Address to RAS Setup  
Time  
16  
18  
20  
22  
24  
CAR  
45  
46  
47  
t
t
t
Access Time from Column  
Precharge  
19  
21  
23  
25  
27  
ns  
ns  
ns  
7
CAP  
DHR  
CSR  
Data in Hold Time Referenced  
to RAS  
26  
10  
28  
10  
30  
10  
35  
10  
40  
10  
CAS Setup Time CAS-before-  
RAS Refresh  
48  
49  
t
t
RAS to CAS Precharge Time  
0
7
0
8
0
8
0
0
ns  
ns  
RPC  
CAS Hold Time CAS-before-  
RAS Refresh  
10  
12  
CHR  
50  
t
EDO Page Mode  
56  
58  
60  
65  
70  
ns  
PCM  
Read-Modify-Write Cycle Time  
51  
52  
t
t
Output Hold After CAS Low  
5
5
5
5
5
5
5
5
5
5
ns  
ns  
COH  
OE Low to CAS High Setup  
Time  
OES  
53  
t
OE Hold Time from WE during 10  
Read-Modify Write Cycle  
10  
10  
10  
10  
ns  
OEH  
V53C818H Rev. 1.2 May 1997  
6
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