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V53C818H35 参数 Datasheet PDF下载

V53C818H35图片预览
型号: V53C818H35
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能512K ×16 EDO页模式的CMOS动态RAM [HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 18 页 / 234 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC  
V53C818H  
AC Characteristics  
T = 0°C to 70°C, V = +5V ± 10%, V = 0V unless otherwise noted  
A
CC  
SS  
AC Test conditions, input pulse levels 0 to 3V  
30  
35  
40  
45  
50  
#
Symbol Parameter  
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes  
1
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RAS Pulse Width  
30  
65  
25  
30  
5
75K  
35  
70  
25  
35  
6
75K  
40  
75  
25  
40  
7
75K  
45  
80  
25  
45  
8
75K  
50  
90  
30  
50  
9
75K  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RAS  
2
Read or Write Cycle Time  
RAS Precharge Time  
RC  
3
RP  
4
CAS Hold Time  
CSH  
CAS  
RCD  
RCS  
ASR  
RAH  
ASC  
CAH  
RSH (R)  
CRP  
RCH  
5
CAS Pulse Width  
6
RAS to CAS Delay  
15  
0
20  
16  
0
24  
17  
0
28  
18  
0
32  
19  
0
36  
7
Read Command Setup Time  
Row Address Setup Time  
Row Address Hold Time  
Column Address Setup Time  
Column Address Hold Time  
RAS Hold Time (Read Cycle)  
CAS to RAS Precharge Time  
4
8
0
0
0
0
0
9
5
6
7
8
9
10  
11  
12  
13  
14  
0
0
0
0
0
5
5
5
6
7
10  
5
10  
5
10  
5
10  
5
10  
5
Read Command Hold Time  
Referenced to CAS  
0
0
0
0
0
5
5
15  
16  
t
t
Read Command Hold Time  
Referenced to RAS  
0
6
0
7
0
8
0
9
0
ns  
ns  
ns  
RRH  
ROH  
RAS Hold Time Referenced  
to OE  
10  
17  
18  
19  
20  
t
t
t
t
Access Time from OE  
Access Time from CAS  
Access Time from RAS  
10  
10  
30  
16  
11  
11  
35  
18  
12  
12  
40  
20  
13  
13  
45  
22  
14  
14  
50  
24  
12  
OAC  
CAC  
RAC  
CAA  
ns 6, 7, 14  
ns 6, 8, 9  
ns 6, 7, 10  
Access Time from Column  
Address  
21  
22  
23  
t
t
t
OE or CAS to Low-Z Output  
OE or CAS to High-Z Output  
0
0
0
0
0
0
0
0
0
0
ns  
ns  
ns  
16  
16  
LZ  
5
6
6
7
8
HZ  
AR  
Column Address Hold Time  
from RAS  
26  
28  
30  
35  
40  
24  
25  
26  
t
t
t
RAS to Column Address  
Delay Time  
10  
10  
10  
14  
11  
10  
11  
17  
12  
10  
12  
20  
13  
10  
13  
23  
14  
10  
14  
26  
ns  
ns  
ns  
11  
RAD  
RAS or CAS Hold Time in  
Write Cycle  
RSH (W)  
CWL  
Write Command to CAS  
Lead Time  
27  
28  
t
t
Write Command Setup Time  
Write Command Hold Time  
0
5
0
5
0
5
0
6
0
7
ns  
ns  
12, 13  
WCS  
WCH  
V53C818H Rev. 1.2 May 1997  
5
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