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V53C8129H35 参数 Datasheet PDF下载

V53C8129H35图片预览
型号: V53C8129H35
PDF下载: 下载PDF文件 查看货源
内容描述: 超高性能, 128K X 8EDO页模式的CMOS动态RAM [ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 18 页 / 200 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC  
V53C8129H  
Data Output Operation  
Table 1. V53C8129H Data Output  
Operation for Various Cycle Types  
The V53C8129H Input/Output is controlled by  
OE, CAS, WE and RAS. A RAS low transition en-  
ables the transfer of data to and from the selected  
row address in the Memory Array. A RAS high tran-  
sition disables data transfer and latches the output  
data if the output is enabled. After a memory cycle  
is initiated with a RAS low transition, a CAS low  
transition or CAS low level enables the internal I/O  
path. A CAS high transition or a CAS high level dis-  
ables the I/O path and the output driver if it is en-  
abled. A CAS low transition while RAS is high has  
no effect on the I/O data path or on the output driv-  
ers. The output drivers, when otherwise enabled,  
can be disabled by holding OE high. The OE signal  
has no effect on any data stored in the output latch-  
es. A WE low level can also disable the output driv-  
ers when CAS is low. During a Write cycle, if WE  
goes low at a time in relationship to CAS that would  
normally cause the outputs to be active, it is neces-  
sary to use OE to disable the output drivers prior to  
the WE low transition to allow Data In Setup Time  
Cycle Type  
I/O State  
Read Cycles  
Data from Addressed Memory  
Cell  
CAS-Controlled Write Cycle  
(Early Write)  
High-Z  
WE-Controlled Write Cycle  
(Late Write)  
OE Controlled.  
High OE = High-Z I/Os  
Read-Modify-Write Cycles  
Data from Addressed Memory  
Cell  
EDO Page Mode Read  
Data from Addressed Memory  
Cell  
EDO Page Mode Write Cycle High-Z  
(Early Write)  
EDO Page Mode Read-  
Modify-Write Cycle  
Data from Addressed Memory  
Cell  
RAS-only Refresh  
High-Z  
(t ) to be satisfied.  
DS  
CAS-before-RAS Refresh  
Cycle  
Data remains as in previous  
cycle  
Power-On  
CAS-only Cycles  
High-Z  
After application of the V  
supply, an initial  
CC  
pause of 200 µs is required followed by a minimum  
of 8 initialization cycles (any combination of cycles  
containing a RAS clock). Eight initialization cycles  
are required after extended periods of bias without  
clocks (greater than the Refresh Interval).  
During Power-On, the V current requirement of  
CC  
the V53C8129H is dependent on the input levels of  
RAS and CAS. If RAS is low during Power-On, the  
device will go into an active cycle and I will exhibit  
CC  
current transients. It is recommended that RAS and  
CAS track with V or be held at a valid V during  
CC  
IH  
Power-On to avoid current surges.  
V53C8129H Rev. 1.3 July 1997  
15  
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