V436616Y24V
written into the E
2
PROM device during module pro-
duction using a serial presence detect protocol (I
2
C
synchronous 2-wire bus)
A serial presence detect storage device -
2
PROM - is assembled onto the module. Informa-
E
tion about the module configuration, speed, etc. is
CILETIV LESOM
Byte Num-
ber
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CS Latencies
24
25
26
27
V436616Y24V Rev. 1.0 January 2002
Serial Presence Detect Information
SPD-Table for modules:
Hex Value
Function Described
Number of SPD bytes
Total bytes in Serial PD
Memory Type
Number of Row Addresses (without BS bits)
Number of Column Addresses (for x16
SDRAM)
Number of DIMM Banks
Module Data Width
Module Data Width (continued)
Module Interface Levels
SDRAM Cycle Time at CL=3
SDRAM Access Time from Clock at CL=3
Dimm Config (Error Det/Corr.)
Refresh Rate/Type
SDRAM width, Primary
Error Checking SDRAM Data Width
Minimum Clock Delay from Back to Back Ran-
dom Column Address
Burst Length Supported
Number of SDRAM Banks
Supported CAS Latencies
SPD Entry Value
128
256
SDRAM
13
9
-75PC
80
08
04
0D
09
-75
80
08
04
0D
09
-10PC
80
08
04
0D
09
1
64
0
LVTTL
7.5 ns/10.0 ns
5.4 ns/6.0 ns
none
Self-Refresh,7.8
µs
x16
n/a / x16
t
ccd
= 1 CLK
1, 2, 4, 8
4
CL =2, 3
CS Latency = 0
WL = 0
Non Buffered/Non Reg.
Vcc tol ± 10%
7. 5 ns/10.0 ns
01
40
00
01
75
54
00
82
10
00
01
01
40
00
01
75
54
00
82
10
00
01
01
40
00
01
A0
60
00
82
10
00
01
0F
04
06
01
01
00
0E
75
0F
04
06
01
01
00
0E
A0
0F
04
06
01
01
00
0E
A0
WE Latencies
SDRAM DIMM Module Attributes
SDRAM Device Attributes: General
Minimum Clock Cycle Time at CAS Latency =
2
Maximum Data Access Time from Clock for
CL = 2
Minimum Clock Cycle Time at CL = 1
Maximum Data Access Time from Clock at CL
=1
Minimum Row Precharge Time
5.4 ns/6.0 ns
54
60
60
Not Supported
Not Supported
00
00
00
00
00
00
15 ns/20 ns
0F
14
14
4