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V436416S04VCTG-75 参数 Datasheet PDF下载

V436416S04VCTG-75图片预览
型号: V436416S04VCTG-75
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3伏16M ×64的高性能PC133 SDRAM UNBUFFERED模块 [3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE]
分类和应用: 内存集成电路动态存储器PC时钟
文件页数/大小: 12 页 / 260 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V436416S04V(C)TG-75
3.3 VOLT 16M x 64 HIGH PERFORMANCE
PC133 UNBUFFERED SDRAM MODULE
PRELIMINARY
CILETIV LESOM
Features
t
CK
t
AC
Description
The V436416S04V(C)TG-75 memory module is
organized 16,777,216 x 64 bits in a 168 pin dual in
line memory module (DIMM). The 16M x 64 memo-
ry module uses 16 Mosel-Vitelic 8M x 8 SDRAM.
The x64 modules are ideal for use in high perfor-
mance computer systems where increased memory
density and fast access times are required.
s
168 Pin Unbuffered 16,777,216 x 64 bit
Oganization SDRAM DIMMs
s
Utilizes High Performance 8M x 8 SDRAM in
TSOPII-54 Packages
s
Fully PC Board Layout Compatible to INTEL’S
Rev 1.0 Module Specification
s
Single +3.3V (± 0.3V) Power Supply
s
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
s
Auto Refresh (CBR) and Self Refresh
s
All Inputs, Outputs are LVTTL Compatible
s
4096 Refresh Cycles every 64 ms
s
Serial Present Detect (SPD)
s
SDRAM Performance
Component Used
Clock Frequency (max.)
Clock Access Time CAS
Latency = 3
-7
143
5.4
Units
MHz
ns
s
Supported Latencies at 133 MHz Operation
CL
3
t
RCD
3
t
RP
3
t
RC
8
CLK
V436416S04V(C)TG-75-01
V436416S04V(C)TG-75 Rev. 1.7 September 2001
1