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V29C51400B 参数 Datasheet PDF下载

V29C51400B图片预览
型号: V29C51400B
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位262,144 x 16位/ 524,288 ×8位的5伏CMOS FLASH MEMORY [4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 16 页 / 72 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MO SEL VITELIC  
V29C51400T/V29C51400B  
erase command (see Table 2). A sector must be first  
erased before it can be re-written. While in the  
internal erase mode, the device ignores any  
program attempt into the device. The internal erase  
completion can be determined via DATA polling or  
toggle bit status.  
Sector Erase Cycle  
The V29C51400T/V29C51400B features a sector  
erase operation which allows each sector to be  
erased and reprogrammed without affecting data  
stored in other sectors. Sector erase operation is  
initiated by using a specific six-bus-cycle sequence:  
Two unlock program cycles, a setup command, two  
additional unlock program cycles, and the sector  
The V29C51400T/V29C51400B is shipped fully  
erased (all bits = 1).  
Table 1. Operation Modes Decoding  
Decoding Mode  
Read  
CE  
OE  
WE  
A
A
A
I/O  
READ  
PD  
0
0
0
1
1
1
9
9
9
V
V
V
V
IH  
A
A
A
A
A
A
IL  
IL  
IH  
IL  
Byte Write  
V
V
IH  
IL  
Standby  
V
X
X
X
X
X
HIGH-Z  
CODE  
CODE  
X
Autoselect Device ID  
Autoselect Manufacture ID  
Enabling Boot Block Protection Lock  
Disabling Boot Block Protection Lock  
Output Disable  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL  
IL  
IL  
IL  
IL  
IH  
IH  
IH  
IL  
IL  
H
H
H
H
V
IL  
V
V
V
V
X
X
H
H
IL  
IL  
IH  
V
X
X
X
X
X
H
V
V
V
X
HIGH-Z  
IL  
IH  
NOTES:  
1. X = Dont Care, V = HIGH, V = LOW, V = 12.5V Max.  
IH  
IL  
H
2. PD: The data at the byte address to be programmed.  
Table 2. Command Codes  
Bus  
Write  
First Bus  
Second Bus  
Third Bus  
Fourth Bus  
Fifth Bus  
Program Cycle Program Cycle  
Six Bus  
Program Cycle Program Cycle Program Cycle Program Cycle  
Command  
Sequence  
Cycles  
Reqd Address Data Address Data Address Data Address Data  
Address Data Address Data  
Reset/Read  
Reset/Read  
1
3
XXXXH  
5555H  
AAAAH  
5555H  
F0H  
Word  
Byte  
AAH 2AAAH  
5555H  
55H 5555H  
AAAAH  
F0H RA  
90H 01H  
RD  
13H, B3H  
(B Device  
ID)  
Autoselect  
Mode  
Word  
3
AAH 2AAAH  
55H 5555H  
13H, B3H  
(B Device  
ID)  
Byte  
AAAAH  
5555H  
AAAAH  
40H  
Word/Byte  
00H  
(Manuf. ID)  
Program  
Word  
Byte  
Word  
Byte  
4
0
6
5555H  
AAAAH  
5555H  
AAAAH  
5555H  
AAAAH  
AAH 2AAAH  
5555H  
55H 5555H  
AAAAH  
A0H PA  
PD(4)  
AAH  
AAH  
Chip Erase  
AAH 2AAAH  
5555H  
55H 5555H  
AAAAH  
80H 5555H  
AAAAH  
2AAAH  
5555H  
2AAAH  
5555H  
55H 5555H  
AAAAH  
10H  
30H  
Sector Erase Word  
Byte  
AAH 2AAAH  
5555H  
55H 5555H  
AAAAH  
80H 5555H  
AAAAH  
55H SA  
NOTES:  
1. RA: Read Address  
2. RD: Read Data  
3. PA: The address of the memory location to be programmed.  
4. PD: The data at the byte address to be programmed.  
5. SA(5): Sector Address  
command, two additional unlock program cycles,  
and the chip erase command (see Table 2).  
The automatic erase begins on the rising edge of  
the last WE or CE pulse in the command sequence  
and terminates when the data on DQ7 is 1.  
Chip Erase Cycle  
The V29C51400T/V29C51400B features a chip-  
erase operation. The chip erase operation is  
initiated by using a specific six-bus-cycle  
sequence: two unlock program cycles, a setup  
V29C51400T/V29C51400B Rev. 1.5 October 2000  
11