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SYS88000RKXLI-12 参数 Datasheet PDF下载

SYS88000RKXLI-12图片预览
型号: SYS88000RKXLI-12
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×8 SRAM模块 [8M x 8 SRAM MODULE]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 7 页 / 84 K
品牌: MOSAIC [ MOSAIC ]
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SYS88000RKX-85/10/12  
ISSUE 1.5 : April 2001  
AC Test Conditions  
Output Load  
* Input pulse levels: 0V to 3.0V  
* Input rise and fall times: 5ns  
* Input and Output timing reference levels: 1.5V  
* Output load: see diagram  
I/O Pin  
645  
1.76V  
100pF  
* VCC=5V±10%  
Operation Truth Table  
CS  
H
L
OE  
X
WE  
X
DATA PINS  
High Impedance  
Invalid State  
Data Out  
SUPPLY CURRENT  
MODE  
Standby  
Invalid  
Read  
ISB1 , ISB2 , ISB3, ISB4  
L
L
~
L
L
H
ICC1  
ICC1  
ICC1  
L
H
H
L
Data In  
Write  
L
H
High-Impedance  
High-Z  
Notes : H = VIH  
: L =VIL : X = VIH or VIL  
OE must not be tied low permanently.  
Low Vcc Data Retention Characteristics - L Version Only  
Parameter  
Symbol  
Test Condition  
CS > VCC-0.2V  
min  
2.0  
typ(1) max  
Unit  
VCC for Data Retention  
Data Retention Current  
VDR  
-
-
-
-
-
2
-
V
mA  
ns  
(2)  
ICCDR1  
VCC = 3.0V, CS > VCC-0.2V  
See Retention Waveform  
See Retention Waveform  
-
0
Chip Deselect to Data Retention Time tCDR  
Operation Recovery Time  
tR  
5.0  
-
ms  
Notes  
(1)  
Typical figures are measured at 25°C.  
(2) This parameter is guaranteed not tested.  
(3) Add 840mA to -L CMOS standby currents to obtain industrial temp range parameters.  
3