8M x 8 SRAM MODULE
SYS88000RKX - 70/85/10/12
Issue 1.5: April 2001
Description
Features
The SYS88000RKX is a plastic 64Mbit Static RAM
Module housed in a standard 38 pin Single In-Line
package organised as 8M x 8 with access times of
85,100, or 120 ns.
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Access Times of 85/100/120 ns.
Low Power Disapation:
Operating
Standby
935 mW (Max.)
11 mW (Max.)
-L Version
Themoduleisconstructedusingsixteen512Kx8SRAMs
in TSOPII packages mounted onto both sides of an FR4
epoxy substrate. This offers an extremely high PCB
packing density.
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5 Volt Supply ± 10%.
Completely Static Operation.
Equal Access and Cycle Times.
Low Voltage VCC Data Retention.
On-board Decoding & Capacitors.
38 Pin Single-In-Line package.
Upgrade from SYS84000RKX (32Mbit).
Thedeviceisofferedinstandardandlowpowerversions,
with the -L module having a low voltage data retention
modeforbatterybackedapplications.Onboardbuffering
is provided to reduce output capacitance.
Note: CS and OE on the module, should be used
with care to avoid on and off board bus contention.
Block Diagram
Pin Definition
A22
A20
Vcc
WE
D2
1
2
3
4
5
D3
6
D0
7
A1
8
A2
A3
A4
GND
D5
A10
A11
A5
A13
A14
A19
CS
A15
A16
A12
A18
A6
D1
GND
A0
A7
9
OE
WE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
A0 - A18
512K X 8
SRAM
T/R
A19
A20
A21
A22
BI-DIRECTIONAL
DRIVERS
D0 - D7
4 TO 16
DECODER
A0~7
74FCT245
OE
D0 - D7
B0~7
512K X 8
SRAM
CS
A8
A9
D7
D4
D6
A17
Vcc
OE
A21
Pin Functions
Address Inputs
A0 ~ A22
D0 ~ D7
CS
Data Input/Output
Chip Select
Package Details
Plastic 38 pin Single-In-Line (SIP)
Write Enable
Output Enable
No Connect
Power (+5V)
Ground
WE
OE
NC
VCC
GND