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MSM8512J-020 参数 Datasheet PDF下载

MSM8512J-020图片预览
型号: MSM8512J-020
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX8, 20ns, CMOS, CQCC32, CERAMIC, LCC-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 8 页 / 105 K
品牌: MOSAIC [ MOSAIC ]
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MSM8512 - 020/025/35
ISSUE 1.0 : January 1999
Military Screening Procedure
Screening Flow
for high reliability product in accordance with MIL-STD-883 method 5004 is shown below.
MB COMPONENT SCREENING FLOW
SCREEN
Visual and Mechanical
Internal visual
Temperature cycle
Constant acceleration
Pre-Burn-in electrical
Burn-in
Final Electrical Tests
Static (dc)
Functional
Switching (ac)
2010 Condition B or manufacturers equivalent
1010 Condition C (10 Cycles,-65
°
C to +150
°
C)
2001 Condition E (Y, only) (30,000g)
Per applicable device specifications at T
A
=+25
°
C
Method 1015,Condition D,T
A
=+125
°
C,160hrs min
Per applicable Device Specification
a) @ T
A
=+25
°
C and power supply extremes
b) @ temperature and power supply extremes
a) @ T
A
=+25
°
C and power supply extremes
b) @ temperature and power supply extremes
a) @ T
A
=+25
°
C and power supply extremes
b) @ temperature and power supply extremes
Calculated at post-burn-in at T
A
=+25
°
C
1014
Condition A
Condition C
2009 Per vendor or customer specification
100%
100%
100%
100%
100%
100%
100%
100%
100%
5%
100%
100%
100%
100%
100%
TEST METHOD
LEVEL
Percent Defective allowable (PDA)
Hermeticity
Fine
Gross
External Visual
7