MSM8512 - 70/85/10
ISSUE 4.3 : January 1999
Low V
cc
Data Retention Characteristics - L Version Only
(T
A
=-55°C to +125
o
C)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention
Operation Recovery Time
Symbol Test Condition
V
DR
I
CCDR
t
CDR
t
R
CS
≥
V
CC
-0.2V
V
CC
=3.0V, CS
≥
V
CC
-0.2V,
See Retention Waveform
See Retention Waveform
min
2.0
-
0
5
typ
-
-
-
-
max
5.5
250
-
-
Unit
V
µA
ns
ms
AC OPERATING CONDITIONS
Read Cycle
Parameter
Symbol
70
min max
70
-
-
-
10
10
5
0
0
-
70
70
35
-
-
-
25
25
85
min max
85
-
-
-
10
10
5
0
0
-
85
85
45
-
-
-
30
30
10
min max
100
-
-
-
10
10
5
0
0
-
100
100
50
-
-
-
30
30
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
t
RC
Address Access Time
t
AA
Chip Select Access Time
t
ACS
Output Enable to Output Valid
t
OE
Output Hold from Address Change
t
OH
Chip Selection to Output in Low Z
t
CLZ
Output Enable to Output in Low Z
t
OLZ
Chip Deselection to Output in High Z
(3)
t
CHZ
Output Disable to Output in High Z
(3)
t
OHZ
Write Cycle
Parameter
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
Output Disable to Output in High Z
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
t
OHZ
70
min max
70
60
60
0
50
0
0
30
0
5
0
-
-
-
-
-
-
30
-
-
-
25
85
min max
85
75
75
0
55
5
0
35
0
5
0
-
-
-
-
-
-
30
-
-
-
30
10
min max
100
80
80
0
60
5
0
40
0
5
0
-
-
-
-
-
-
30
-
-
-
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
MOSAIC [ MOSAIC ]
