ISSUE 4.2 : November 1998
MFM8126S - 70/90/12
DC Operating Conditions
Absolute Maximum Ratings
(1)
Voltage on any pin w.r.t. Gnd (except A9)
Supply Voltage
(2)
Voltage on A
9
w.r.t. Gnd
Storage Temperature
Notes : (1)
(2)
max
unit
-2.0 to +7
V
-2.0 to +7
V
-2.0 to +14
V
-55 to +150 °C
(2)
Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operationof the device at those or any other conditions above those indicated in the operational sections of this
specification is not implied.
Minimum DC voltage on any input or I/O pin is -0.5V. Maximum DC voltage on output and I/O pins is Vcc+0.5V. During
transitions voltage may overshoot by +/-2V for upto 20ns
Recommended Operating Conditions
Parameter
Symbol
min
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
TTL
CMOS
TTL
CMOS
V
CC
V
IH
V
IHC
V
IL
V
ILC
T
A
T
AI
T
AM
4.5
2.0
0.7 V
CC
-0.5
-0.5
0
-40
-55
typ
5.0
-
-
-
-
-
-
-
max
5.5
V
CC
+0.5
V
CC
+0.5
0.8
0.8
70
85
125
unit
V
V
V
V
V
°C
°C (-I suffix)
°C (-M,
MB
suffix)
DC Electrical Characteristics
(T
A
= -55°C to +125°C,V
CC
=5V
±
10%)
Parameter
Symbol Test Condition
Input Leakage Current
Output Leakage Current
Standby Supply Current
TTL
CMOS
I
LI
I
LO
I
SB1
I
SB2
I
CC1
I
CC2
V
OL
V
OH
V
LKO
V
ID
V
CC
=5.0V
V
IN
=0 to V
CC
, V
CC
= V
CC
max.
V
OUT
=0 to V
CC
,V
CC
= V
CC
max.
CS=V
IH
,V
CC
= V
CC
max.
CS=V
CC
+0.5 , V
CC
= V
CC
max.
CS = V
IL
, OE = V
IH
CS = V
IL
, OE = V
IH
I
OL
=12mA , V
CC
= V
CC
min.
I
OH
=-2.5mA
,
V
CC
= V
CC
min.
min
-
-
-
-
typ
-
-
-
-
max
±1
±1
1
100
30
50
Unit
µA
µA
mA
µA
mA
mA
V
V
V
V
Operating Current
Read
Program/Erase
Output LowVoltage
Output HighVoltage
Low Vcc lock out voltage
A9 voltage for autoselect
-
-
-
2.4
3.2
11.5
-
-
-
-
0.45
-
-
12.5
Capacitance
(T
A
=25
o
C,f=1MHz)
Parameter
Input Capacitance:
Output Capacitance:
Symbol
C
IN
C
OUT
Test Condition
V
IN
=0V
V
OUT
=0V
typ
6
8.5
max
7.5
12
Unit
pF
pF
Note: Capacitance calculated not measured.
2
MOSAIC [ MOSAIC ]
