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MFM8126VM-12E 参数 Datasheet PDF下载

MFM8126VM-12E图片预览
型号: MFM8126VM-12E
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128KX8, 120ns, CDXA32, 0.100 INCH, CERAMIC, VIL-32]
分类和应用: 内存集成电路
文件页数/大小: 27 页 / 328 K
品牌: MOSAIC [ MOSAIC ]
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MFM8126S-70/90/12  
ISSUE4.2:November1998  
If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, D3 may be  
used to determine if the sector erase timer window is still open. If D3 is high the internally controlled erase cycle  
has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is  
completed as indicated by Data Polling or Toggle Bit. If D3 is low , the device will accept additional sector erase  
commands. To insure the command has been accepted, the software should check the status of D3 prior to and  
following each subsequent sector erase command. If D3 were high on the second status check, the command  
may not have been accepted.  
Data Protection  
The MFM8126 is designed to offer protection against accidental erasure or programming caused by spurious  
system level signals that may exist during power transition. During power up the device automatically resets the  
internal state machine in the Read mode. Also, with its controls register architecture , alteration of the memory  
contents only occurs after successful completion of specific multi-bus cycle command sequences. The device  
also incorporates several features to prevent inadvertent write cycles resulting from Vcc power up and power  
down transitions or system noise.  
Low V Write Inhibit  
CC  
To avoid initiation of a write cycle during VCC power up and power down, a write cycle is locked out for VCC less  
than 3.2V (typically 3.7V). If VCC<VLKO, the command register is disabled and all internal program/erase circuits  
are disabled. Under this condition the device will reset to read mode. Subsequent writes will be ignored until the  
VCC level is greater than VKLO. It is usually correct to prevent unintentional writes when VCC is above 3.2V.  
Write Pulse "Glitch" Protection  
Noise pulses of less than 5ns (typical) on OE, CS, WE will not initiate a write cycle  
Logical Inhibit  
Writing is inhibited by holding any one of OE=VIL, CS=VIH or WE=VIH. To initiate a write cycle CS and WE  
must be logical zero while OE is a logical one.  
Power-Up Write Inhibit  
Power-up of the device with WE=CS=VIL and OE=VIH will not accept commands on the rising edge of WE. The  
internal state machine is automatically reset to the read mode on power-up.  
Sector Protect  
Sectors of the MFM8126 may be hardware protected at the users factory. The protection circuitry will disable  
both program and erase functions for the protected sector(s). Requests to program or erase a protected sector  
will be ignored by the device.  
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