MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA08H1317M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
20
18
16
14
12
10
8
6
5
4
3
2
1
0
f=175MHz,
VGG=3.5V,
Pin=20mW
Pout
6
4
2
0
IDD
2
4
6
8
10
12
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
4
3
2
1
0
16
4
3
2
1
0
f=135MHz,
VDD=12.5V,
Pin=20mW
f=155MHz,
VDD=12.5V,
14
12
10
8
14
Pout
12
10
8
Pin=20mW
Pout
IDD
6
6
IDD
4
4
2
2
0
0
1
1.5
2
2.5
3
3.5
4
1
1.5
2
2.5
3
3.5
4
GATE VOLTAGE VGG(V)
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
16
4
3
2
1
0
f=175MHz,
VDD=12.5V,
Pin=20mW
14
12
10
8
Pout
6
IDD
4
2
0
1
1.5
2
2.5
3
3.5
4
GATE VOLTAGE VGG(V)
RA08H1317M
24 Jan 2006
MITSUBISHI ELECTRIC
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