MITSUBISHI RF POWER MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE RA08H1317M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
VDD
VGG
Pin
Drain Voltage
Drain Voltage
Gate Voltage
Input Power
VGG=0V, Pin=0W
VGG<3.5V
16
V
V
13.2
VDD<12.5V, Pin<20mW
4
40
V
mW
W
f=135-175MHz,
ZG=ZL=50Ω
Pout
Output Power
10
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
-30 to +90
-40 to +110
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f
Frequency Range
Output Power
Total Efficiency
2nd Harmonic
Input VSWR
135
8
175
MHz
W
Pout
ηT
V
DD=12.5V,VGG=3.5V, Pin=20mW
out=8W (VGG control),
40
%
P
2fo
ρin
-25
dBc
—
VDD=12.5V,
Pin=20mW
4.4:1
IGG
Gate Current
1
mA
VDD=5-13.2V, Pin=10-30mW, Pout<9W (VGG control),
Load VSWR=4:1
—
—
Stability
No parasitic oscillation
—
—
VDD=13.2V, Pin=20mW, Pout=8W (VGG control),
Load VSWR Tolerance
No degradation or destroy
Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
RA08H1317M
24 Jan 2006
MITSUBISHI ELECTRIC
2/8
MITSUBISHI [ Mitsubishi Group ]
