MITSUBISHI MICROCOMPUTERS
4280 Group
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Parameter
Conditions
Ratings
Unit
V
Supply voltage
Input voltage
–0.3 to 5
VI
–0.3 to VDD+0.3
–0.3 to VDD+0.3
300
V
VO
Pd
Output voltage
Power dissipation
V
Ta = 25 °C
mW
Topr
Tstg
Operating temperature range
Storage temperature range
–20 to 85
°C
–40 to 125
°C
RECOMMENDED OPERATING CONDITIONS
(Ta = –20 °C to 85 °C, VDD = 1.8 V to 3.6 V, unless otherwise noted)
Limits
Symbol
Parameter
Unit
Conditions
Min.
1.8
Typ.
Max.
3.6
VDD
VRAM
VSS
VIH
Supply voltage
V
V
1.4
RAM back-up voltage (at RAM back-up mode)
Supply voltage
3.6
0
V
“H” level input voltage Ports D7, E, G
“H” level input voltage XIN
0.7VDD
VDD
VDD
0.2VDD
0.2VDD
–4
V
VDD = 3 V
0.8VDD
VIH
V
VDD = 3 V
0
0
VIL
“L” level input voltage Ports D7, E, G
“L” level input voltage XIN
V
VDD = 3 V
VIL
V
VDD = 3 V
IOH(peak) “H” level peak output current Ports D, E1, G
“H” level peak output current Port E0
mA
mA
mA
mA
mA
mA
mA
mA
MHz
kHz
VDD = 3 V
–24
–20
4
IOH(peak)
VDD = 3 V
IOH(peak) “H” level peak output current CARR
IOL(peak) “L” level peak output current CARR
IOH(avg) “H” level average output current Ports D, E1, G
IOH(avg) “H” level average output current Port E0
IOH(avg) “H” level average output current CARR
IOL(avg) “L” level average output current CARR
VDD = 3 V
VDD = 3 V
–2
VDD = 3 V
–12
–10
2
VDD = 3 V
VDD = 3 V
VDD = 3 V
4
when STCK = f(XIN)/8 selected
when STCK = f(XIN) selected
Ceramic resonance
Ceramic resonance
f(XIN)
VDET
TDET
TPON
System clock frequency
500
1.80
1.56
1.10
1.40
V
Voltage drop detection circuit detection voltage
1.50
0.16
Ta=25 °C
Supply voltage is -10V/s and
drops under detected voltage.
Voltage drop detection circuit low voltage
determination time
1.2
1
ms
ms
Power-on reset circuit valid power source rising time
VDD = 0 to 2.2 V
Note: The average output current ratings are the average current value during 100 ms.
MITSUBISHI
ELECTRIC
37
MITSUBISHI [ Mitsubishi Group ]
