MITSUBISHI IGBT MODULES
CM200DX-24A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT I
C
(A)
V
GE
=
20V
15
T
j
= 25°C
13
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
400
4
3.5
3
2.5
2
1.5
1
0.5
0
0
V
GE
= 15V
300
12
200
11
100
10
9
0
0
1
2
3
4
5
6
7
8
9 10
T
j
= 25°C
T
j
= 125°C
100
200
300
400
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
10
3
7
5
3
2
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
10
T
j
= 25°C
8
6
EMITTER CURRENT I
E
(A)
10
2
7
5
3
2
4
I
C
= 400A
2
I
C
= 200A
I
C
= 80A
0
6
8
10
12
14
16
18
20
T
j
= 25°C
T
j
= 125°C
0
0.5
1
1.5
2
2.5
3
3.5
4
10
1
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
10
2
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10
3
7
5
3
2
SWITCHING TIME (ns)
C
ies
CAPACITANCE (nF)
t
f
t
d(off)
10
1
7
5
3
2
10
2
7
5
3
2
C
oes
t
d(on)
t
r
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
10
0
7
5
3
2
10
1
7
5
3
2
C
res
V
GE
= 0V
10
–1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 1
10
COLLECTOR CURRENT I
C
(A)
Jan. 2009
6
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
