MITSUBISHI IGBT MODULES
CM200DX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS
INVERTER PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
Parameter
(Tj = 25
°
C, unless otherwise specified)
Conditions
V
CE
= V
CES
, V
GE
= 0V
Collector cutoff current
Gate-emitter threshold voltage I
C
= 20mA, V
CE
= 10V
Gate leakage current
±V
GE
= V
GES
, V
CE
= 0V
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
I
C
= 200A, V
GE
= 15V
I
C
= 200A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 600V, I
C
= 200A, V
GE
= 15V
V
CC
= 600V, I
C
= 200A
V
GE
=
±15V,
R
G
= 1.6Ω
Inductive load
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
(I
E
= 200A)
I
E
= 200A, V
GE
= 0V
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
V
EC(Note.3)
Emitter-collector voltage
R
lead
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
R
Gint
R
G
I
E
= 200A, V
GE
= 0V
Module lead resistance
Main terminals-chip, per switch
Thermal resistance
per IGBT
(Note. 1) per free wheeling diode
(Junction to case)
Contact thermal resistance
Thermal grease applied
(Case to heat sink) (Note. 1) per 1 module
Internal gate resistance
T
C
= 25°C, per switch
External gate resistance
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
Limits
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
1000
—
—
—
—
—
8
2.6
2.16
2.5
1.6
—
—
0.015
0
—
Max.
1
8
0.5
2.6
—
—
35
3.0
0.68
—
130
100
450
600
150
—
3.4
—
—
—
0.10
0.19
—
—
16
Unit
mA
V
μA
V
nF
nC
ns
μC
V
mΩ
K/W
(Note. 2)
Ω
NTC THERMISTOR PART
Symbol
R
ΔR/R
B
(25/50)
P
25
Note.1:
2:
3:
4:
5:
6:
Parameter
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
(Note. 7)
Min.
4.85
–7.3
—
—
Limits
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Unit
kΩ
%
K
mW
Case temperature (T
C
), heat sink temperature (T
f
) measured point is just under the chips. (Refer to the figure of the chip location.)
Typical value is measured by using thermally conductive grease of
λ
= 0.9W/(m·K).
I
E
, I
ERM
, V
EC
, t
rr
and Q
rr
represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed Tjmax rating.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for V
CE(sat)
and V
EC
)
1
7:
B
(25/50)
= In( R
25
)/( 1
)
T
50
R
50
T
25
R
25
: resistance at absolute temperature T
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
Jan. 2009
3
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
