MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10
3
7
5
SWITCHING TIMES (ns)
t
f
t
d(off)
7
5
3
2
7
5
3
2
3
2
10
2
7
5
3
2
t
d(on)
t
r
V
CC
= 300V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 125°C
2
3
5 7
10
2
2
3
5 7
10
3
10
2
7
5
3
2
t
rr
10
0
7
5
3
10
1 1
10
10
1 1
10
–di/dt = 400A/µs
T
j
= 25°C
2
3
5 7
10
2
2
3
2
5 7
10
3
10
–1
COLLECTOR CURRENT I
C
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
C
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
C
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
10
0
Per unit base = R
th(j – c)
= 0.19K/W
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
10
0
Per unit base = R
th(j – c)
= 0.35K/W
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
10
–2
10
–2
10
–2
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
I
C
= 200A
V
CC
= 200V
15
V
CC
= 300V
10
5
0
0
100
200
300
400
500
600
GATE CHARGE Q
G
(nC)
Feb. 2009
4
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
10
10
1
l
rr
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
