MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
(Tj = 25
°
C, unless otherwise specified)
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
V
GE
= 0V
V
CE
= 0V
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C
Conditions
Ratings
600
±20
200
400
200
400
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
(Note 1)
(Note 1)
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr (Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
V
FM
t
rr
Q
rr
R
th(j-c)
R
th(c-f)
Note 1.
2.
3.
4.
5.
6.
(Tj = 25
°
C, unless otherwise specified)
Item
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 20mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 200A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
(Note 4)
T
j
= 25°C
T
j
= 125°C
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
6
—
2.4
2.6
—
—
—
400
—
—
—
—
—
—
0.48
—
—
—
—
0.48
—
0.07
Max
1
7.5
0.5
3.0
—
17.6
9.6
2.6
—
150
400
300
300
2.6
160
—
0.19
0.35
2.6
160
—
0.35
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
V
ns
µC
K/W
K/W
V
CC
= 300V, I
C
= 200A, V
GE
= 15V
V
CC
= 300V, I
C
= 200A
V
GE
=
±15V
R
G
= 3.1Ω
Resistive load
I
E
= 200A, V
GE
= 0V
I
E
= 200A
die / dt = –400A /
µs
Junction to case, IGBT part
Thermal resistance (Note 5)
Junction to case, FWDi part
Forward voltage
I
F
= 200A, Clamp diode part
Reverse recovery time
I
F
= 200A
Reverse recovery charge
dif / dt = –400A /
µs,
Clamp diode part
Thermal resistance (Note 5) Junction to case, Clamp diode part
Case to heat sink, conductive grease applied
Contact thermal resistance
(Per 1/2 module)
(Note 6)
Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (T
C
) measured point is shown in page OUTLINE DRAWING.
Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Feb. 2009
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
