MITSUBISHI HVIGBT MODULES
CM1800HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
V
CC
= 850V, I
C
= 1800A
T
j
= 25°C
V
GE
= 0V, T
j
= 25°C
f = 100kHz
C
ies
16
CAPACITANCE (nF)
10
2
7
5
3
2
GATE-EMITTER VOLTAGE (V)
5 7
10
2
12
C
oes
8
10
1
7
5
3
2
C
res
4
10
0 -1
10
2 3
5 7
10
0
2 3
5 7
10
1
2 3
0
0
5
10
15
20
25
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (
µC
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2000
V
CC
= 850V, V
GE
=
±15V
R
G(on)
= R
G(off)
= 0.3Ω
T
j
= 125°C, Inductive load
3000
E
on
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
V
CC
= 850V, I
C
= 1800A
V
GE
=
±15V
T
j
= 125°C, Inductive load
E
on
SWITCHING ENERGIES (mJ/pulse)
1600
SWITCHING ENERGIES (mJ/pulse)
2500
2000
1200
E
off
1500
E
off
1000
800
400
E
rec
500
E
rec
0
0.5
1
1.5
2
2.5
0
0
600
1200
1800
2400
3000
3600
0
COLLECTOR CURRENT (A)
GATE RESISTANCE (
Ω
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
