MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1800HC-34H
q
I
C ................................................................
1800A
q
V
CES .......................................................
1700V
q
Insulated Type
q
1-element in a Pack
q
AISiC Baseplate
q
Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57
±0.1
190
±0.5
171
±0.1
57
±0.1
57
±0.1
6 - M8 NUTS
C
20
–0.2
+0.1
C
C
C
G
E
124
±0.1
140
±0.5
40
±0.2
E
E
E
C
C
C
CM
C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25
±0.2
41.25
±0.3
3 - M4 NUTS
79.4
±0.3
61.5
±0.3
screwing depth
min. 7.7
8 -
φ7
±0.1
MOUNTING HOLES
screwing depth
min. 16.5
61.5
±0.3
13
±0.2
15
±0.2
40
±0.3
5.2
±0.2
5
±0.15
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
29.5
±0.5
38
+1
0
28
+1
0
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
