MITSUBISHI IGBT MODULES
CM15MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
30
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
30
COLLECTOR CURRENT I
C
(A)
V
GE
=20
(V)
T
j
=25°C
24
15
12
V
CE
= 10V
24
18
11
18
12
10
9
8 7
12
6
6
T
j
= 25°C
T
j
= 125°C
0
0
2
4
6
8 10 12 14 16 18 20
0
0
1
2
3
4
5
6
7
8
9 10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
I
C
= 6A
8 10 12 14 16 18 20
I
C
= 15A
I
C
= 30A
T
j
= 25°C
4
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
3
2
1
0
0
6
12
18
24
30
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
10
2
EMITTER CURRENT I
E
(A)
7
5
3
2
CAPACITANCE VS. V
CE
(TYPICAL)
10
1
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
T
j
= 25°C
V
GE
= 0V
10
0
7
5
3
2
C
ies
C
oes
10
1
7
5
3
2
10
–1
7
5
3
2
C
res
10
0
0
0.8
1.6
2.4
3.2
4.0
10
–2
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
