MITSUBISHI IGBT MODULES
CM15MD1-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS
INVERTER PART
Symbol
I
CES
Parameter
(T
j
= 25°C)
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 1.5mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 15A, V
GE
= 15V
T
j
= 150°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 300V, I
C
= 15A, V
GE
= 15V
V
CC
= 300V, I
C
= 15A
V
GE1
= V
GE2
= 15V
R
G
= 42Ω
Resistive load
I
E
= 15A, V
GE
= 0V
I
E
= 15A, V
GE
= 0V
di
e
/ dt = – 30A /
µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
Collector cutoff current
Gate-emitter
V
GE(th)
threshold voltage
Gate-emitter cutoff current
I
GES
Collector-emitter
V
CE(sat)
saturation voltage
Input capacitance
C
ies
Output capacitance
C
oes
Reverse transfer capacitance
C
res
Total gate charge
Q
G
Turn-on delay time
t
d (on)
Turn-on rise time
t
r
t
d (off)
Turn-off delay time
t
f
Turn-off fall time
V
EC (Note. 1)
Emitter-collector voltage
t
rr (Note. 1)
Reverse recovery time
Q
rr (Note. 1)
Reverse recovery charge
R
th(j-f)
Q
(Note. 5)
Thermal resistance
R
th(j-f)
R
(Note. 5)
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.1
2.15
—
—
—
45
—
—
—
—
—
—
0.04
—
—
Max.
1
7.5
0.5
2.8
—
1.5
1.2
0.3
—
120
300
200
300
2.8
110
—
2.8
3.5
Unit
mA
V
µ
A
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µ
C
°C/W
°C/W
(Note. 4)
CONVERTER PART
Symbol
Parameter
V
R
= V
RRM
, T
j
= 150°C
I
F
= 20A
Per 1/6 module
Condition
Min.
—
—
—
Limits
Typ.
—
—
—
Max.
8
1.5
3.6
Unit
mA
V
°C/W
Repetitive reverse current
I
RRM
Forward voltage drop
V
FM
R
th(j-f) (Note. 5)
Thermal resistance
Note 1.
2.
3.
4.
5.
I
E
, V
EC
, t
rr,
Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Thermal resistance is specified under following conditions.
•
The conductive greese applied, between module and fin.
•
Al plate is used as fin.
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
